| Chairman: |
Dr. Cor Claeys, IMEC, Belgium |
| Co-Chairmen: |
Dr. Ru Huang, Peking University, China |
| Dr. Prashant Majhi, Sematech, USA |
| Committee Members: |
Dr. Waisum Wong, SMIC |
| Dr. Sunil Wickramanayaka, Anelva Corp., Japan |
| Dr. Albert Wang, Illinois Institute of Technology |
| Dr. Summer Tseng, SMIC |
 |
| March 16 |
| 13:00-13:05 |
Chairman Address |
| |
Dr. Cor Claeys, IMEC, Belgium |
| 13:05-13:30 |
Invited:ESD Protection Design for RF Circuits in CMOS Technology With Low-C Implementation |
| |
Morris (Ming-Dou) Ker, NCTU |
| 13:30-13:55 |
Invited:Positive charges in Hf-based Dielectric Stacks |
| |
Jianfu Zhang, Liverpool John Moores University |
| 13:55-14:20 |
Invited:Stress simulation of embedded Si1-yCy Source/Drain nMOSFETs |
| |
Cor Claeys, IMEC |
| 14:20-14:45 |
Invited:CMOS scaling into next decade: Trends, Challenges and Opportunities |
| |
Prashant Majhi, Sematech |
| 14:45-15:10 |
Invited:A New Analytical Subthreshold Behavior Model for Asymmetrical Dual Material Double-Gate(ADMDG) MOSFET¨S |
| |
T.K. Chiang, Southern Taiwan University |
| 15:10-15:30 |
Coffee Break |
| 15:30-15:55 |
Invited:Strain engineering for high mobility channels |
| |
Sarah Olsen, University of Newcastle |
| 15:55-16:10 |
Improving the Reliability of Metal-Insulator-Metal Capacitor (MIMC) by Integrating TiN only Bottom Plate in Mixed Signal Devices |
| |
Jagdish Prasad, AMI Semiconductor |
| 16:10-16:25 |
Characteristics FePt Magnetic Nano-Dot MOS Capacitor |
| |
M. Murugesan, Japan Sci. Technol |
| 16:25-16:40 |
The Effect of Post-Metallization Annealing on the Reliability of Copper Interconnects |
| |
Jeff Gambino, IBM |
| 16:40-16:55 |
Properties of Ballistic current in MOSFETs studied by RT model |
| |
Yasuhiro Morozumi, Tokyo Institute of Technology |
| 16:55-17:10 |
Origin of Frequency Dispersion in High-k Dielectrics |
| |
C. Z. Zhao , University of Liverpool |
| 17:10-17:25 |
High-k materials and their response to X-ray radiation |
| |
C. Z. Zhao, University of Liverpool |
| 17:25-17:40 |
Investigation of STI Stress Impact from HDP Process on Device Performance |
| |
MingYuan Liu, SMIC |
March 17 |
| 08:00-08:15 |
Mechanism Study of Hot Carrier Induced Degradation in LDMOSFET |
| |
Xinggong Wan, HHNEC |
| 08:15-08:30 |
Charge to breakdown of ONO, the bottom thermal oxide and the top oxide in ONO for flash memory applications |
| |
Feng Yan, SMIC |
| 08:30-08:45 |
Dynamic Simulation of Void Formation and Evolution in Dual Damascene Copper Interconnect |
| |
Dong Luo, Novellus |
| 08:45-09:00 |
Simulation on the Effect of Halo Implantation Precision on the Performance of 36nm NMOSFET Device |
| |
Jianwen Qi, Nissin Allis Ion Equipment |
| 09:00-09:15 |
Design, Modeling, and Fabrication of A Low IL and High Q SAW Delay Line |
| |
Yigui Zhao, China Academy of Sciences |
| 09:15-09:30 |
Case Study For Mushroom Defect Encountered At Passivation Module In X-FAB |
| |
K. A. Mohammad, X-FAB Sarawak Sdn. Bhd. |
| 09:30-10:00 |
Coffee Break |
| 10:00-10:15 |
Equivalent circuit analysis of V-SrZrO3 sputter-deposited thin films showing resistive switching |
| |
C.H. Lai, National United University |
| 10:15-10:30 |
Electromigration and Signal Integrity in Multilevel Interconnection |
| |
Jianjun Wei, Northwest Polytechnical University |
| 10:30-10:45 |
A New Self-Aligned BOI (Body-on-Insulator) FinFET Fabricated on Bulk Si Wafers |
| |
Runsheng Wang, Peking University |
| 10:45-11:00 |
Reliability enhancement in advanced MOSFETs using the U-shape STI structure for radiation application |
| |
Yunpeng Pei, Peking University |
| 11:00-11:15 |
A New Measurement Method on 1/f Noise of Wafer Level |
| |
Lihua Huang, Peking University |
