| Chairman: |
Dr. Hanming Wu, SMIC, China |
| Co-Chairman: |
Dr.
Sowmya Krishnan, Ultra Clean Technology, USA |
| Committee Members: |
Dr. Jian Ding, Northern Microelectronics Center, China |
| Dr. Ruiping Wang, Applied Materials Inc., USA |
| Dr. Chenting Lin, ECI Technology, USA |
| Dr. Jack Kuo, LAM Research, USA |
 |
| March 16 |
| 13:00-13:05 |
Chairman Address |
| |
Hanming Wu, SMIC, China |
| 13:05-13:35 |
Invited:Advances and Challenges in Post Salicidation Cleans for 45nm Technology Node and Beyond |
| |
Kaidong Xu, SEZ AG |
| 13:35-14:05 |
Invited:Critical Issues in Flow Control for Semiconductor Processing |
| |
Hubert Dihn, UCT |
| 14:05-14:35 |
Invited:Roadblocks and Critical Aspects for Sub 45 nm Wafer Cleaning and Possible Solutions |
| |
Paul W. Mertens, IMEC |
| 14:35-15:05 |
Invited:UV assisted thermal curing: Overview and fundamental understanding through Spin-on and PECVD processes |
| |
Aziz Zenasni, CEA-LETI-MINATEC |
| 15:05-15:30 |
Coffee Break |
| 15:30-16:00 |
Control of Metal Gate Oxidation in Plasma Processing of IC Devices |
| |
Songlin Xu, Mattson Technology Inc |
| 16:00-16:30 |
A Metrology of Semiconductor Nanotechnology Lithography Gap Fill Processes Integration |
| |
Chun-Jen Weng, Leader University |
| 16:30-16:45 |
Investigation on Low Temperature Photo Resist Strip Application for Cobalt Salicide Missing Issue |
| |
Dong Luo, Novellus |
| 16:45-17:00 |
Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers |
| |
Yoshihisa Ohishi, Tokyo Institute of Technology |
| 17:00-17:15 |
The Cleaning Method Which is Able to Keep the Smoothness of Si(100) |
| |
Xiang Li, Tohoku University |
March 17 |
| 08:00-08:15 |
Annealing of NdAlOx high-k dielectric deposited by liquid injection MOCVD using single source precursors |
| |
C.Z.Zhao, University of Liverpool |
| 08:15-08:30 |
Development of Strippers Compatible with Porous and Ultra-porous Low-Films |
| |
Matthew Egbe, Air Products and Chemicals Inc |
| 08:30-08:45 |
Damascene Metal Gate Technology for Damage-Free High-k Process Integration |
| |
Ralf Endres, Technische Universit?t Darmstadt |
| 08:45-09:00 |
New method on uniformity tuning of Ta(N) barrier layer |
| |
Liu Fang, Applied Materials |
| 09:00-09:15 |
FAB Environment Effect on DARC and Oxide Film Deposition Using CVD Technology |
| |
Rayer Wang, SMIC |
| 09:15-09:30 |
A Highly effective Shallow Trench Isolation Gap-fill (STI gap-fill) Technology Using H2-Etch Enhanced HDP-CVD Process for 90nm NAND Flash |
| |
Steed Xiao, SMIC |
| 09:30-10:00 |
Coffee Break |
| 10:00-10:15 |
An effective method for micro-arcing detection in Encore Ta process |
| |
Baibing Ni, SMIC |
| 10:15-10:30 |
A study of the impact of substrate temperature to the post-etch volcano defect |
| |
Jiwei Zhang, SMIC |
| 10:30-10:45 |
The combination of thermal NO-annealing and DPN process to form a novel SiON gate dielectric for 65nm technology node and beyond |
| |
Allen He, SMIC |
| 10:45-11:00 |
Rapid Thermal Processing from 100oC to 1100oC without Lamps: Isothermal Cavity Concept and Process Results |
| |
Igor J. Malik, WaferMasters, Inc. |
| 11:00-11:15 |
Clustet Ion Implantation System for beyond 45nm Device Fabrication |
| |
Masayasu Tanjyo, Nissin Ion Equipment Co.,Ltd |
| 11:15-12:00 |
Q&A |
| 12:00-13:00 |
Luncheon |
| 13:00-13:15 |
Advanced Inline Process Control on PVD System-An Application of RGA for IC Manufacturing Quality and Capacity Improvement |
| |
Yongqiang Wu, SMIC |
| 13:15-13:30 |
Environmental Challenges to China's Semiconductor Manufacturing Industry-AMC effects to Semiconductor IC Fabrication in China |
| |
Hua Zhou, SMIC |
| 13:30-13:45 |
Process Development and Optimization of Non-fluorine HDI Resist Strip at 45nm |
| |
Keping Han, Axcelis |
| 13:45-14:00 |
Novel Approach for an Optimal Fluoride-Based Stripper |
| |
Libbert Peng, Anji Microeleectronics |
| 14:00-14:15 |
An analysis of the ball type defect formation mechanism in Encore Ta process |
| |
Andy Chen, SMIC |
| 14:15-14:30 |
PNL Application on WCVD Process--Contact WCVD Step Coverage Optimization for 0.13um Logic Products Cp Improvement |
| |
Xiaotao Kong, SMIC |
| 14:30-14:45 |
Impact of ion implantation on Nickel Germanides Formation with Pure-Ge Substrate and the Electrical Dependence of NiGe/Ge Schottky Diode on Contact Hole Size |
| |
Xia An, Peking University |
| 14:45-15:00 |
X-Ray Diffraction and Annealing Study of Aluminum Thin Film |
| |
Ping Zhang, Southeast University |
| 15:00-15:30 |
Coffee Break |
| 15:30-15:45 |
Review of Low-K Dielecric Constant Materials |
| |
Huiling Shi, Hebei University of Technology |
| 15:45-16:00 |
Impacts of poly-Si gate pre-implanted dopant on the performance and HCI reliability of 65nm NMOS device |
| |
Jie Huang, Peking University |
| 16:00-16:15 |
The Material Characterization of Nickel Germanosilicides on SiGe/Si Substrate and the Size Effect on Schottky Diodes |
| |
Chunhui Fan, Peking University |
