| Chairman: |
Dr. David P. Huang, Praxair, USA |
| Co-Chairmen: |
Mr. Srini Raghavan, University of Arizona, USA |
Committee Members: |
Dr. Fei Xu,
ATMI, Asia |
| Dr. Wei-Chung Yu, CMP. Rohm & Haas Electronic Materials Inc, USA |
| Dr. Renhe Jia, Applied Materials Corp., USA |
| Dr. Uday Mahajan, KLA Tencor, USA |
 |
March 16 |
| 13:00-13:05 |
Chairman Address |
| |
David P. Huang, Praxair, USA |
| 13:05-13:35 |
Invited:Integration of Porous Low K Dielectrics and CMP Challenges |
| |
Mansour Moinpour, Intel Corporation |
| 13:35-14:05 |
Invited:Application of Chemical Mechanical Polishing to Sub 45 nm Logic Technology |
| |
Yongsik Moon, AMD, USA |
| 14:05-14:35 |
Invited:Guidelines for Developing Post- CMP Cleaning Formulations for Copper and Tungsten |
| |
Srini Raghavan, University of Arizona, USA |
| 14:35-15:05 |
Invited:What Does It Mean to Lead in CMP Technology Today |
| |
Cliff Spiro, Cabot Microelectronics |
| 15:05-15:25 |
Coffee Break |
| 15:25-15:45 |
New Applications of CMP: from Computer Hard Drives to Solar Panels |
| |
Yuzhuo Li, Clarkson University |
| 15:45-16:05 |
A Study of Post CMP Voids in Narrow Trenches |
| |
Ruipeng Yang, SMIC |
| 16:05-16:25 |
Bench top dual mode eCMP polisher with multi sensing metrology |
| |
Jun Xiao, CETR |
| 16:25-16:45 |
Cu CMP Passivation Film Charecterization Using Electrochemical Technique |
| |
Sunny Xu, Anji Microelectronic |
| 16:45-17:05 |
The Impact of Wafer Substrate Topography on the WIWNU - Interferometry Study |
| |
Mark Plemmons, KLA-Tencor |
March 17th |
| 08:00-08:20 |
Evolution and Revolution of Cerium Oxide Slurries in CMP |
| |
David Merricks, Ferro Electronic Material Systems |
| 08:20-08:40 |
Corrosion and Organic Defects during Chemical Mechanical Polishing of Copper |
| |
Zhendong Liu, Rohm and Haas Electronic Materials, CMP Technologies |
| 08:40-09:00 |
Development of Acidic Post-CMP Cleaners for Tungsten CMP |
| |
Gautam Banerjee, Air Products and Chemicals |
| 09:00-09:20 |
Fundamental Characterizations of Pad, Diamond Disc, and Retaining Ring Wear |
| |
A. Philipossian, Araca, Inc. |
| 09:20-09:40 |
A New Platform of Ceria Based ILD CMP Slurry |
| |
Kai Luo, Carbot Microelectronics Corp. |
| 09:40-10:00 |
Coffee Break |
| 10:00-10:20 |
A technical approach of high removal rate Cu slurry for 3D-IC and MEMS |
| |
Yoshiyuki Matsumura, Nitta Haas Incorporated |
| 10:20-10:40 |
Fixed Abrasive CMP Process Characterization using unpatterned wafer defect and surface quality inspection |
| |
John Gagliardi, 3M Corporation |
| 10:40-11:00 |
Development of a single dispersion for the planrization of Cu and barrier layer |
| |
S. V. Babu, Clarkson University |
| 11:20-11:40 |
Function of Hydrogen Bond on TEOS Polishing |
| |
Jery Chen, Anji Microelectronic |
| 11:40-12:00 |
Investigation of Dynamic CMP Pad-Wafer Contact Characteristics by Computational Modeling |
| |
Bo Jiang, Rohm and Haas Electronic Materials CMP Technologies |
| 12:00-13:00 |
Luncheon |
| 13:00-13:20 |
Effects of impacting nanoparticles in CMP process |
| |
Jianbin Luo, Tsinghua University |
| 13:20-13:40 |
Study on CMP Mechanism and Nanometer Slurry of NiP Substrate of Computer Hard-disk |
| |
Jun Tian, Hebei University of Technology |
