| Chairman: |
Dr. Qinghuang Lin, IBM, USA |
| Co-Chairmen: |
Ebrahim Andideh, Intel, USA |
| Committee Members: |
Jiezhang, Motorola, USA |
| Jinn P. Chu, National Taiwan University of Science and Technology |
 |
March 16
|
| 13:00-13:10 |
Chairman address |
| |
Dr. Qinghuang Lin, IBM, USA |
| 13:10-13:40 |
The Future of Interconnects |
| |
Ken Cadien, University of Alberta |
| 13:40-14:10 |
Environmental Challenges and Opportunities in Nanoelectronics Manufacturing |
| |
Farhang Shadman, The University of Arizona |
| 14:10-14:40 |
Porosity Characteristics of Ultralow Dielectric Insulator Films Directly Patterned by Nanoimprint Lithography |
| |
Chris Soles, NIST |
| 14:40-15:10 |
The atomic layer deposition of oxides and metals for next generation semiconductor devices |
| |
H. Kim , POSTECH, Korea |
| 15:10-15:40 |
Coffee Break |
| 15:40-16:10 |
The Technology Roadmap to the 32 nm Generation |
| |
Reza Arghavani, Applied Materials |
| 16:10-16:40 |
Plasma Etching of Self-Assembled Nanostructures |
| |
Ying Zhang, IBM |
| 16:40-17:10 |
Nanocrystal formation and characterization for Memory Application |
| |
Hua Ji, SMIC |
| 17:10-17:30 |
Cobalt Atomic Layer Deposition for Contact Applications of Nanoscale Device |
| |
Han-Bo-Ram Lee, POSTECH, Korea |
| 17:30-17:50 |
GST Thin Film Metrology with XRR and XRF |
| |
Mengqi Ye, Applied Materials |
March 17
|
| 08:00-08:30 |
|
| |
Ben Ong |
| 08:30-09:00 |
Solution Procossed Materials for Application in Organic Electronics: Novel Hybrid and Acceptor Materials |
| |
Alan Sellinger, IMRE, Singapore |
| 09:00-09:20 |
Carbon Nanotube for High-Performance Flexible Electronics |
| |
Qing Cao , University of Illinois at Urbana-Champaign |
| 09:20-09:40 |
Pentacene Thin Film Transistors with Chemically Modified SiO2 Surface by Phenyl-Radical |
| |
Hirofumi Fukai, Nihon University |
| 09:40-10:00 |
Coffee Break |
| 10:00-10:30 |
|
| |
Jie Zhang , Motorola |
| 10:30-11:00 |
Solution Processed Printable Organic Memory Devices |
| |
Keryn Lian, University of Toronto |
| 11:00-11:20 |
Electrical Resistive Switching in Organic Molecules and High-k Dielectric Bi-layer Films |
| |
Deyu Tu, Chinese Academy of Sciences |
| 11:20-11:40 |
Porous Silicon-Based Surface Modifications of Polymers |
| |
Jingmei Lu, Xiamen University |
| 12:00-13:00 |
Luncheon |
| 13:00-13:30 |
Novel Cu Alloy Seed Layers for Barrierless Metallization |
| |
Jinn P. Chu, University of Science and Technology, Taiwan |
| 13:30-13:50 |
Ruthenium film growth from Ru(CO)3(C6H8) at low temperatures in sequentially pulsed deposition mode |
| |
Vladislay Vasilyev, Korea Polytechnic University |
| 13:50-14:10 |
Deep Si via etching through SiO2 layer for 3-D LSI |
| |
Jun Liang, Tohoku University |
| 14:10-14:30 |
High Aspect Ratio Copper Through Wafer Interconnects (TWIs) for 3D integration |
| |
Chongshen Song , Tsinghua Universtiy |
| 14:30-14:50 |
Novel Silicon MEMS fabrication processes including anodic bonding of extremely thin (60 um-thick) silicon film on glass substrate |
| |
Yasushiro Nishioka, Nihon University |
| 14:50-15:20 |
Coffee Break |
| 15:20-15:40 |
Resistive switching characteristics of hafnium oxide with Cu doping for nonvolatile memory application |
| |
Weihua Guan, Chinese Academy of Sciences |
| 15:40-16:00 |
The Induced Effect in the Pt/BFO/BNdT/Pt Capacitors for the Application in FeRAM |
| |
Yongyuan Zang, Tsinghua University |
| 16:00-16:20 |
Characteristics and mechanism of TiN/ZnO/Pt-based Resistive Random Access Memory devices |
| |
Nuo Xu, Peking University |
| 16:20-16:40 |
Artificial Neural Network Modeling of MECVD Diamond Thin Film Deposition Process |
| |
WJ Zhang, University of Saskatchewan |
| 16:40-17:00 |
Nanostructure Fabrication via Hybrid Process Using Self-Assembled Nanotemplates, AAO and Diblock Copolymer |
| |
Sang-Joon Park, POSTECH, Korea |
| 17:00-17:20 |
Removal of Organic Contaminants on Si Wafer Surfaces by Electrochemical Cleaning Technique |
| |
Jianxin Zhang , Hebei University of Technology |
