March 15-17, 2008, Holiday Inn, Pudong, Shanghai, China
The 7th International Semiconductor Technology Conference¨CISTC2008, sponsored by The Electrochemical Society, Japan society of Applied physics and IEEE, organized with the intention of providing a forum for the presenting and discussion of the latest developments in silicon semiconductor technology and related fields. Papers that deal with all aspects of fabrication processes, equipment, materials, device physics, characterization, and applications are solicited. The conference consists of seven symposia, as listed in the below:
Symposium A. Device and Reliability: topics include diode, capacitor, physics, device and materials reliability characterization, modeling; device and interconnect reliability, test structures, wafer level reliability tests, failure mechanisms for power devices, nano tubes or nano technology, and plasma induced damage.
Symposium B. Design for Manufacturing (DFM): Topic areas focus on efforts on DFM technology development, including process and device modeling, EDA techniques, IC design optimization, DFM-aware design flow, variability-aware design methodology, RET based techniques, model-based techniques, and other novel concepts/approaches.
Symposium C. Photolithgraphy: topics include advances in resist technology and processing, exposure tool and imaging technologies, overlay enhancement and metrology, defect control and inspection, critical dimension (CD) control, resolution enhancement techniques (RET) and OPC, optical microlithography and emerging lithographic technologies.
Symposium D. FEOL & BEOL Advanced Processing: topics include substrate material science; cell isolation; high-k dielectrics and metal gate; shallow junction formation; source drain contacts (silicide/salicide); conductive interconnects (PVD, ALD, ECP, Electroless); dielectrics (stress layer, low-k, diffusion barriers/etch stops, caps, ARC layers); stain silicon related technology, millisecond spike anneal technology, etch; clean; and process module development and integration.
Symposium E. CMP and Post-CMP Cleaning: topics include CMP process developments & manufacturing in dielectric and metal CMP (including Cu/low-k) , modeling, process integration, post CMP cleaning & defect reduction, metrology for CMP process control and inspection, CMP consumables (pads/slurries/etc.) , equipment and tooling, new technologies.
Symposium F. Packaging, Assembly and Test: topics include advanced packaging, material, process, metrology, equipment, packaging reliability and test. This session also features the challenges and the latest developments in lead-free process, thermal solution technology, and emerging assembly and packaging technologies.
Symposium G. Emerging Technology:
Post-CMOS Device and Materials Options:
Nanotube, nanowire based devices, spintronics, quantum dots, NEMS-based logic and memory devices, molecular electronics;
Emerging Device Technologies and Integration:
3-dimmensional (3-D) integration, magnetic memory (MRAM), phase change memory, optical interconnects , fault-tolerant architectures;
Alternate Applications of Semiconductor Devices and Processes:
Bio-chips, biology-semiconductor interfaces, MEMS, Bio-MEMS, micro-fluidic and biomedical devices, sensors and integrated sensor systems for chemical and biological detection, photovoltaic, solar cells, silicon photonics;
Emerging Materials and Processes:
Organic/plastic electronics, self-assembly, directed-assembly, atomic layer deposition, EUV lithography, nanoimprint lithography and nontraditional patterning techniques, environmentally-friendly materials, processes and manufacturing.
The Conference is also aimed at providing a forum for synergistic interactions among those working in semiconductor R&D, production, and equipment. It is also designed for those who want to learn state-of-the-art process technologies and manufacturing limitations. The conference is also considering to arrangement local tours such as Industry Park, Universities and sightseeing. Welcome attendee's spouse to anticipate the local activities and events.
Contributing authors should submit a 250-word abstract together with a 100-word biography for evaluation via email to ISTC2008@ecsasia.org before October 15, 2007. Notifications of paper acceptance will be sent out by November 20, 2007. Instructions for submitting full manuscripts, presentation slides, and other required documentations, as well registration details will be announced and mailed to the authors in due time. Students are encouraged to participate in the best student paper contest. Instructions for authors as well as ISTC templates for abstracts, biography and manuscripts can be found on the ECS-China website http://www.ecschina.org.
1. abstract - Online Abstract Submission
2. author's biography
3. full paper manuscripts
Publication of a proceedings volume is planned. Papers published in a proceedings volume may also be submitted to the JOURNAL, but must be received no later than six months after the date of the symposium at which the paper was presented.
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